High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO2

• Published in: Applied physics letters Vol. 103; no. 25
• Main Authors: Lin, T. D., Chang, W. H., Chu, R. L., Chang, Y. C., Chang, Y. H., Lee, M. Y., Hong, P. F., Chen, Min-Cheng, Kwo, J., Hong, M.
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 16-12-2013
• Subjects: Activation; Aluminum oxide; Applied physics; Atomic layer epitaxy; Barrier layers; Capacitance-voltage characteristics; Electron mobility; Hafnium oxide; Leakage current; MOSFETs; Self alignment; Semiconductor devices; Surface pretreatments; Transconductance; Transistors
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.4852975

Self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors (MOSFETs) have been fabricated using the gate dielectrics of in-situ directly atomic-layer-deposited (ALD) HfO2 followed by ALD-Al2O3. There were no surface pretreatments and no interfacial passivation/barrier layers prior to the ALD. TiN/Al2O3 (4 nm)/HfO2 (1 nm)/In0.53Ga0.47As/InP MOS capacitors exhibited well-behaved capacitance-voltage characteristics with true inversion behavior, low leakage current densities of ∼10−8 A/cm2 at ±1 MV/cm, and thermodynamic stability at high temperatures. Al2O3 (3 nm)/HfO2 (1 nm)/In0.53Ga0.47As MOSFETs of 1 μm gate length, with 700 °C–800 °C rapid thermal annealing in source/drain activation, have exhibited high extrinsic drain current (ID) of 1.5 mA/μm, transconductance (Gm) of 0.84 mS/μm, ION/IOFF of ∼104, low sub-threshold swing of 103 mV/decade, and field-effect electron mobility of 1100 cm2/V · s. The devices have also achieved very high intrinsic ID and Gm of 2 mA/μm and 1.2 mS/μm, respectively.