Gain dynamics of quantum dot devices for dual-state operation

Gain dynamics of quantum dot devices for dual-state operation

Ground state gain dynamics of In(Ga)As-quantum dot excited state lasers are investigated via single-color ultrafast pump-probe spectroscopy below and above lasing threshold. Two-color pump-probe experiments are used to localize lasing and non-lasing quantum dots within the inhomogeneously broadened...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters Vol. 104; no. 26
Main Authors: Kaptan, Y., Schmeckebier, H., Herzog, B., Arsenijević, D., Kolarczik, M., Mikhelashvili, V., Owschimikow, N., Eisenstein, G., Bimberg, D., Woggon, U.
Format: Journal Article
Language:English
Published: Melville American Institute of Physics 30-06-2014
Subjects:
Applied physics
COLOR
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CURRENTS
Electrons
EXCITED STATES
GAIN
GALLIUM ADDITIONS
Ground state
GROUND STATES
INDIUM ARSENIDES
INJECTION
Injection current
LASERS
Lasing
Optoelectronic devices
PUMPING
QUANTUM DOTS
SPECTROSCOPY
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Ground state gain dynamics of In(Ga)As-quantum dot excited state lasers are investigated via single-color ultrafast pump-probe spectroscopy below and above lasing threshold. Two-color pump-probe experiments are used to localize lasing and non-lasing quantum dots within the inhomogeneously broadened ground state. Single-color results yield similar gain recovery rates of the ground state for lasing and non-lasing quantum dots decreasing from 6 ps to 2 ps with increasing injection current. We find that ground state gain dynamics are influenced solely by the injection current and unaffected by laser operation of the excited state. This independence is promising for dual-state operation schemes in quantum dot based optoelectronic devices.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4885383