High Mg-content wurtzite MgZnO alloys and their application in deep-ultraviolet light-emitters pumped by accelerated electrons

High Mg-content single-phase wurtzite MgZnO alloys with a bandgap of 4.35 eV have been obtained on sapphire substrate by introducing a composition-gradient MgxZn1−xO buffer layer. By employing the accelerated electrons obtained in a solid-state structure as an excitation source, an emission at aroun...

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Bibliographic Details
Published in:	Applied physics letters Vol. 104; no. 3
Main Authors:	Ni, Pei-Nan, Shan, Chong-Xin, Li, Bing-Hui, Shen, De-Zhen
Format:	Journal Article
Language:	English
Published:	Melville American Institute of Physics 20-01-2014
Subjects:	Applied physics Buffer layers CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CUBIC LATTICES ELECTRONIC STRUCTURE ELECTRONS Emission Emitters Emitters (electron) ENERGY GAP EXCITATION FAR ULTRAVIOLET RADIATION LAYERS Light emission MAGNESIUM COMPOUNDS PHOTON EMISSION SAPPHIRE SEMICONDUCTOR MATERIALS SOLIDS SUBSTRATES Ultraviolet radiation Wide bandgap semiconductors Wurtzite ZINC OXIDES
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