High Mg-content wurtzite MgZnO alloys and their application in deep-ultraviolet light-emitters pumped by accelerated electrons

High Mg-content wurtzite MgZnO alloys and their application in deep-ultraviolet light-emitters pumped by accelerated electrons

High Mg-content single-phase wurtzite MgZnO alloys with a bandgap of 4.35 eV have been obtained on sapphire substrate by introducing a composition-gradient MgxZn1−xO buffer layer. By employing the accelerated electrons obtained in a solid-state structure as an excitation source, an emission at aroun...

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Bibliographic Details
Published in:Applied physics letters Vol. 104; no. 3
Main Authors: Ni, Pei-Nan, Shan, Chong-Xin, Li, Bing-Hui, Shen, De-Zhen
Format: Journal Article
Language:English
Published: Melville American Institute of Physics 20-01-2014
Subjects:
Applied physics
Buffer layers
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CUBIC LATTICES
ELECTRONIC STRUCTURE
ELECTRONS
Emission
Emitters
Emitters (electron)
ENERGY GAP
EXCITATION
FAR ULTRAVIOLET RADIATION
LAYERS
Light emission
MAGNESIUM COMPOUNDS
PHOTON EMISSION
SAPPHIRE
SEMICONDUCTOR MATERIALS
SOLIDS
SUBSTRATES
Ultraviolet radiation
Wide bandgap semiconductors
Wurtzite
ZINC OXIDES
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Summary:High Mg-content single-phase wurtzite MgZnO alloys with a bandgap of 4.35 eV have been obtained on sapphire substrate by introducing a composition-gradient MgxZn1−xO buffer layer. By employing the accelerated electrons obtained in a solid-state structure as an excitation source, an emission at around 285 nm, which is originated from the near-band-edge emission of the Mg0.51Zn0.49O active layer, has been observed. The results reported in this paper may provide a promising route to high performance deep-ultraviolet light-emitting devices by bypassing the challenging doping issues of wide bandgap semiconductors.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4862789