Millimeter-wave monolithic barrier n-n+ diode grid frequency doubler

A monolithic quasioptical frequency multiplier array, comprised of approximately 1760 Ga0.5Al0.5As/GaAs barrier n-n+ (BNN) diodes, has been successfully fabricated. The BNN diode, first fabricated in these studies, possesses strongly nonlinear capacitance-voltage (C-V) characteristics, thereby offer...

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Bibliographic Details
Published in:	Applied physics letters Vol. 62; no. 14; pp. 1650 - 1652
Main Authors:	XIAOHUI QIN, DOMIER, C, LUHMANN, N. C, LIU, H.-X. L, CHUNG, E, SJOGREN, L, WENHSING WU
Format:	Journal Article
Language:	English
Published:	Melville, NY American Institute of Physics 05-04-1993
Subjects:	Applied sciences Circuit properties Electric, optical and optoelectronic circuits Electronics Exact sciences and technology Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Gallium Arsenides Millimetric wave Diode Frequency multiplier Frequency doubler Aluminium Gallium Arsenides Mixed Microwave
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Summary:	A monolithic quasioptical frequency multiplier array, comprised of approximately 1760 Ga0.5Al0.5As/GaAs barrier n-n+ (BNN) diodes, has been successfully fabricated. The BNN diode, first fabricated in these studies, possesses strongly nonlinear capacitance-voltage (C-V) characteristics, thereby offering the potential for a highly efficient device for millimeter-wave frequency multiplication applications. A frequency doubled power of 2.1 W at 66 GHz has been observed with a conversion efficiency of 7.5%.
Bibliography:	ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.108615