Mechanically flexible thin film transistors and logic gates on plastic substrates by use of single-crystal silicon wires from bulk wafers

• Published in: Applied physics letters Vol. 96; no. 17; pp. 173501 - 173501-3
• Main Authors: Lee, Seoung-Ki, Jang, Houk, Hasan, Musarrat, Koo, Jae Bon, Ahn, Jong-Hyun
• Format: Journal Article
• Language: English
• Published: American Institute of Physics 26-04-2010
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.3409475

This letter presents a method to fabricate single-crystal silicon wires from (100) wafer and print them onto thin plastic substrates for high-performance, mechanically flexible, thin-film transistors by dry transfer printing. Electrical measurements indicate excellent performance, with a per ribbon mobility of
580

cm
2
/
V
s
, subthreshold voltage of 100 mV/dec and on/off ratios
>
10
7
. The inverter shows good performance and voltage gains of
∼
2.5
at 3 V supply voltage. In addition, these devices revealed stable performance at bending configuration, an important feature essential for flexible electronic systems.