Improved phosphorus injection synthesis for bulk InP

• Published in: Journal of crystal growth Vol. 225; no. 2-4; pp. 225 - 230
• Main Authors: Higgins, W.M, Iseler, G.W, Bliss, D.F, Bryant, G, Tassev, V, Jafri, I, Ware, R.M, Carlson, D.J
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01-05-2001; Elsevier
• Subjects: A2. Czochralski method; A2. Growth from melt; A2. Liquid encapsulated Czochralski method; B1. Phospides; B2. Semiconducting idium phosphide; B2. Semiconducting III–V materials; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Growth from melts; zone melting and refining; Materials science; Methods of crystal growth; physics of crystal growth; Physics; 81.20.Zx; B1.Phospides; A2.Czochralski method; A2.Growth from melt; B2.Semiconducting III–V materials; 81.20.−n; B2.Semiconducting idium phosphide; 81.10.Fq; A2.Liquid encapsulated Czochralski method; 81.05.Ea; Inorganic compounds; Semiconductor materials; Phosphides; Czochralski method; Phosphorus; Experimental study; Optimization; High pressure; Indium phosphides; Steam injection; Magnetic fields; Liquid encapsulation; Crystal growth from melts; III-V semiconductors
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(01)00838-7

High purity, stoichiometric InP is being produced in crucible-shaped, 3-kg charges by the phosphorus injection method in a high-pressure magnetic liquid encapsulated Czochralski (MLEC) crystal growth system. Dedicated heaters in the phosphorus injector assembly are used to heat and controllably inject the phosphorus vapor into the liquid encapsulated indium melt. Glow discharge mass spectroscopy and van der Pauw measurements of the polycrystalline charges and the Czochralski wafers confirmed the low background levels of impurities.