Atomic arsenic detection by ArF laser-induced fluorescence

Atomic arsenic detection by ArF laser-induced fluorescence

Arsenic atoms sputtered from gallium arsenide wafers or arsenic-doped n-type silicon wafers have been detected in argon plasmas using the laser-induced fluorescence technique (LIF). Two methods of LIF detection were employed. One used a tunable, frequency-doubled dye laser to pump a metastable trans...

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Bibliographic Details
Published in:Applied physics letters Vol. 51; no. 3; pp. 167 - 168
Main Author: SELWYN, G. S
Format: Journal Article
Language:English
Published: Melville, NY American Institute of Physics 20-07-1987
Subjects:
Analytical chemistry
Chemistry
Exact sciences and technology
Spectrometric and optical methods
Chemical analysis
Arsenic
Detection
Wafer
Fluorescence spectrometry
Laser
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Summary:Arsenic atoms sputtered from gallium arsenide wafers or arsenic-doped n-type silicon wafers have been detected in argon plasmas using the laser-induced fluorescence technique (LIF). Two methods of LIF detection were employed. One used a tunable, frequency-doubled dye laser to pump a metastable transition of atomic arsenic at 228.81 nm. The second technique used the broadband output of an ArF excimer laser to pump a ground-state transition of As at 193.76 nm.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
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ISSN:0003-6951
1077-3118
DOI:10.1063/1.98910