Radiation-induced defect formation in chalcogenide glasses

Radiation-induced defect formation in chalcogenide glasses

The modified model of native and radiation-induced microvoid-type positron traps in vitreous chalcogenide semiconductors is developed to explain compositional features of positron annihilation lifetime measurements in stoichiometric As2S3-GeS2 and non-stoichiometric As2S3-Ge2S3 chalcogenide glasses...

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Bibliographic Details
Published in:Journal of non-crystalline solids Vol. 326-327; pp. 268 - 272
Main Authors: Shpotyuk, O.I., Filipecki, J., Kozdras, A., Kavetskyy, T.S.
Format: Journal Article
Language:English
Published: 01-10-2003
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Summary:The modified model of native and radiation-induced microvoid-type positron traps in vitreous chalcogenide semiconductors is developed to explain compositional features of positron annihilation lifetime measurements in stoichiometric As2S3-GeS2 and non-stoichiometric As2S3-Ge2S3 chalcogenide glasses before and after g-irradiation. 11 refs.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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ISSN:0022-3093
DOI:10.1016/S0022-3093(03)00406-X