Photoluminescence of boron-doped Si1-xGex epilayers grown by UHV-CVD

Photoluminescence of boron-doped Si1-xGex epilayers grown by UHV-CVD

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Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Vol. 89; no. 1-3; pp. 141 - 145
Main Authors: ROWELL, N. L, LAFONTAINE, H, DION, M
Format: Conference Proceeding Journal Article
Language:English
Published: Amsterdam Elsevier 14-02-2002
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Metals and metallic alloys
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
Inorganic compounds
Impurity density
Ge-Si alloys
Impurity cluster
Doping
Photoluminescence
Experimental study
Thin films
CVD
Kinetic model
Excitons
Acceptor center
Boron additions
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Description
ISSN:0921-5107
1873-4944
DOI:10.1016/S0921-5107(01)00820-0