GaAs thermal treatment with fullerenes

• Published in: Materials science in semiconductor processing Vol. 11; no. 2; pp. 63 - 69
• Main Authors: Mekys, Algirdas, Storasta, Jurgis, Smilga, Algirdas P., Čeponkus, Justinas, Barisevičiūtė, Rūta, Šablinskas, Valdas, Kalendra, Vidmantas, Kažukauskas, Vaidotas
• Format: Journal Article
• Language: English
• Published: Kidlington Elsevier Ltd 01-04-2008; Elsevier
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Dislocations; Doping and impurity implantation; Exact sciences and technology; Fullerene C 60; Fullerenes and related materials; diamonds, graphite; Lattice dynamics; Magnetic properties and materials; Magnetic properties of nanostructures; Magnetoresistance; Materials science; Phonons in low-dimensional structures and small particles; Physics; Specific materials; Transport properties of condensed matter (nonelectronic); Hh; Fullerene C 60; 61.72.–y; 78.30.Na; 72.20.My; Doping and impurity implantation; 71.55.–i; Magnetoresistance; 61.72.Ff; Lk; Dislocations; Thermal diffusion; Valence bands; 61.72.-y; 71.55.-i; Energy levels; Doping; Phonons; Heat treatments; Impurities; Vibrational modes; Fullerene C60; Fullerenes; Electron mobility
• ISSN: 1369-8001; 1873-4081
• DOI: 10.1016/j.mssp.2008.11.002

Fullerenes C
60 were introduced into the GaAs crystal through the dislocation network by means of thermal diffusion. Energy level at 0.34–0.42
eV above the valence band was identified, which could be related to C
60. Interaction between C
60 vibration modes and GaAs Debye phonons was evidenced by the measurements of electric parameters. After the thermal treatment, electron mobility had diminished significantly as compared to pure GaAs crystals. This phenomenon was related to the changes in the EL2 level.