β-SiC on SiO2 formed by ion implantation and bonding for micromechanics applications

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Bibliographic Details
Published in:	Sensors and actuators. A, Physical Vol. 74; no. 1-3; pp. 169 - 173
Main Authors:	SERRE, C, ROMANO-RODRIGUEZ, A, PEREZ-RODRIGUEZ, A, MORANTE, J. R, FONSECA, L, ACERO, M. C, KÖGLER, R, SKORUPA, W
Format:	Conference Proceeding Journal Article
Language:	English
Published:	Lausanne Elsevier Science 20-04-1999
Subjects:	Applied sciences Design. Technologies. Operation analysis. Testing Electronics Exact sciences and technology Impurity doping, diffusion and ion implantation technology Integrated circuits Microelectronic fabrication (materials and surfaces technology) Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Micromechanical devices Wafer bonding Silicon on insulator technology Ion implantation Heat treatment Silicon carbide Laminated structure Experimental study
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ISSN:	0924-4247 1873-3069
DOI:	10.1016/S0924-4247(98)00311-2