Thermodynamics of GaNyAs1-y growth by metalorganic vapor phase epitaxy

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Bibliographic Details
Published in:	Journal of crystal growth Vol. 231; no. 1-2; pp. 48 - 56
Main Authors:	GUPTA, J. A, MCKINNON, W. R, NOAD, J, COULAS, D, WILLIAMS, R. L, DRIAD, R, MCALISTER, S. P
Format:	Journal Article
Language:	English
Published:	Amsterdam Elsevier 01-09-2001
Subjects:	Cross-disciplinary physics: materials science; rheology Exact sciences and technology Materials science Methods of deposition of films and coatings; film growth and epitaxy Physics Theory and models of film growth Vapor phase epitaxy; growth from vapor phase Inorganic compounds Epitaxial layers Semiconductor materials Gallium Organic compounds Solubility Theoretical study Crystal growth from vapors XRD Experimental study Precursor High-resolution methods Organic hydrazine Nitrides Gallium Arsenides nitrides Solid solutions MOVPE method Miscibility Thermodynamic analysis Organic arsine Chemical composition Arsenides III-V semiconductors
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ISSN:	0022-0248 1873-5002
DOI:	10.1016/S0022-0248(01)01446-4