Intensification of Förster transitions between Si crystallites due to their doping with phosphorus

Intensification of Förster transitions between Si crystallites due to their doping with phosphorus

Rates of exciton transitions between heavily P-doped silicon crystallites are calculated, and their dependencies on the phosphorus concentration are found. It is shown that doping is capable of considerable acceleration of resonant exciton transfer that becomes an even more efficient process in dens...

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Bibliographic Details
Published in:Physical review. B, Condensed matter and materials physics Vol. 88; no. 4
Main Authors: Belyakov, V. A., Burdov, V. A.
Format: Journal Article
Language:English
Published: 29-07-2013
Subjects:
Amplification
Condensed matter
Crystallites
Doping
Excitation
Mathematical analysis
Phosphorus
Silicon
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Summary:Rates of exciton transitions between heavily P-doped silicon crystallites are calculated, and their dependencies on the phosphorus concentration are found. It is shown that doping is capable of considerable acceleration of resonant exciton transfer that becomes an even more efficient process in dense ensembles of silicon crystallites than the radiative interband recombination.
Bibliography:ObjectType-Article-1
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content type line 23
ISSN:1098-0121
1550-235X
DOI:10.1103/PhysRevB.88.045439