Engineered Schottky barriers on n-In0.35Ga0.65As

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Bibliographic Details
Published in:	Materials science & engineering. B, Solid-state materials for advanced technology Vol. 80; no. 1-3; pp. 248 - 251
Main Authors:	HORVATH, Zs. J, VO VAN TUYEN, FRANCHI, S, BOSACCHI, A, FRIGERI, P, GOMBIA, E, MOSCA, R, PAL, D, KALMAR, I, SZENTPALI, B
Format:	Conference Proceeding Journal Article
Language:	English
Published:	Amsterdam Elsevier 22-03-2001
Subjects:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Physics Surface double layers, schottky barriers, and work functions Gallium arsenides Impurity density Schottky barriers Ternary compounds Doping Aluminium Computerized simulation Experimental study Indium arsenides Thickness Acceptor center Barrier height IV characteristic
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ISSN:	0921-5107 1873-4944
DOI:	10.1016/S0921-5107(00)00616-4