Quantum-size effects in semiconductor heterosystems

Quantum-size effects in semiconductor heterosystems

Created on the basis of Si, GaAs and C60 fullerenes were low-dimensional heterostructures with a surface quantum-size effect at the film-substrate interface. There have been defined technological conditions of its appearance. Using modulation electroreflectance spectroscopy, calculated were spectral...

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Bibliographic Details
Published in:Semiconductor physics, quantum electronics, and optoelectronics Vol. 20; no. 2; pp. 224 - 230
Main Author: Matveeva, L.A.
Format: Journal Article
Language:English
Published: National Academy of Sciences of Ukraine. Institute of Semi conductor physics 18-07-2017
Subjects:
electronic parameters
electroreflectance
heterostructures
interface
Online Access:Get full text
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Summary:Created on the basis of Si, GaAs and C60 fullerenes were low-dimensional heterostructures with a surface quantum-size effect at the film-substrate interface. There have been defined technological conditions of its appearance. Using modulation electroreflectance spectroscopy, calculated were spectral broadening parameters, the energy relaxation time of excited light charge carriers, the energy of quantized levels and the width of the quantum wells.
ISSN:1560-8034
1605-6582
DOI:10.15407/spqeo20.02.224