Selective growth of GaAs and Al0.35Ga0.65As on GaAs patterned substrates by HCl assisted low pressure metalorganic vapour phase epitaxy

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Bibliographic Details
Published in:	Journal of crystal growth Vol. 165; no. 1-2; pp. 1 - 7
Main Authors:	NATAF, G, LEROUX, M, LAÜGT, S. M, GIBART, P
Format:	Journal Article
Language:	English
Published:	Amsterdam Elsevier 01-07-1996
Subjects:	Cross-disciplinary physics: materials science; rheology Exact sciences and technology Materials science Methods of deposition of films and coatings; film growth and epitaxy Physics Vapor phase epitaxy; growth from vapor phase Aluminium arsenides Gallium arsenides Semiconductor materials Ternary compounds Organometallic compounds Photoluminescence Controlled atmospheres Binary compounds Hall effect VPE Crystal growth from vapors MOVPE Experimental study Substrates Selective growth Thermodynamic analysis
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Description
ISSN:	0022-0248 1873-5002
DOI:	10.1016/0022-0248(96)00172-8