Comprehensive Evaluation of Junctionless and Inversion-Mode Nanowire MOSFETs Performance at High Temperatures

This work aims to perform a comprehensive comparison of the electrical properties of junctionless and inversion-mode nanowires MOSFETS, fabricated with similar gate stack and state-of-art process, in the temperature range from 300 K to 580 K. The comparative analysis is performed through the main el...

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Bibliographic Details
Published in:	IEEE journal of the Electron Devices Society Vol. 12; pp. 682 - 691
Main Authors:	Prates, Rhaycen R., Barraud, Sylvain, Casse, Mikael, Vinet, Maud, Faynot, Olivier, Pavanello, Marcelo A.
Format:	Journal Article
Language:	English
Published:	New York IEEE 2024 The Institute of Electrical and Electronics Engineers, Inc. (IEEE) IEEE Electron Devices Society
Subjects:	Conduction cooling Conduction heating Electric power Electrical characterization Electrical properties Electronics Engineering Sciences High temperature inversion-mode junctionless Logic gates MOSFETs Nanowires Parameters Performance evaluation Semiconductor device measurement Silicon Temperature Temperature measurement Thermal stability Threshold voltage Transconductance Transistors Voltage measurement inversion-mode characterization high temperature junctionless
Online Access:	Get full text
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