Comprehensive Evaluation of Junctionless and Inversion-Mode Nanowire MOSFETs Performance at High Temperatures

• Published in: IEEE journal of the Electron Devices Society Vol. 12; pp. 682 - 691
• Main Authors: Prates, Rhaycen R., Barraud, Sylvain, Casse, Mikael, Vinet, Maud, Faynot, Olivier, Pavanello, Marcelo A.
• Format: Journal Article
• Language: English
• Published: New York IEEE 2024; The Institute of Electrical and Electronics Engineers, Inc. (IEEE); IEEE Electron Devices Society
• Subjects: Conduction cooling; Conduction heating; Electric power; Electrical characterization; Electrical properties; Electronics; Engineering Sciences; High temperature; inversion-mode; junctionless; Logic gates; MOSFETs; Nanowires; Parameters; Performance evaluation; Semiconductor device measurement; Silicon; Temperature; Temperature measurement; Thermal stability; Threshold voltage; Transconductance; Transistors; Voltage measurement; inversion-mode; characterization; high temperature; junctionless
• ISSN: 2168-6734; 2168-6734
• DOI: 10.1109/JEDS.2024.3409579

This work aims to perform a comprehensive comparison of the electrical properties of junctionless and inversion-mode nanowires MOSFETS, fabricated with similar gate stack and state-of-art process, in the temperature range from 300 K to 580 K. The comparative analysis is performed through the main electrical parameters of the devices, such as the threshold voltage, subthreshold current and slope, DIBL, conduction current, mobility, and maximum transconductance extracted from experimental data. Devices with different fin widths are compared. It is demonstrated that the inversion-mode nanowire transistors present higher performance with three times higher maximum transconductance and conduction current and twice higher low field mobility than the junctionless' with a fin width of 10 nm at a fixed temperature. On the other hand, the junctionless nanowire transistors presented higher thermal stability of their electrical parameters with a 75% lower variation of maximum transconductance with temperature, 77% lower maximum transconductance variation with temperature, and 22% lower temperature coefficient of mobility.