Optimisation of Coupling between Photonic Crystal and Active Elements in an Epitaxially Regrown GaAs Based Photonic Crystal Surface Emitting Laser

Optimisation of Coupling between Photonic Crystal and Active Elements in an Epitaxially Regrown GaAs Based Photonic Crystal Surface Emitting Laser

The waveguide design of a GaAs based, epitaxially regrown photonic crystal surface emitting laser is discussed so as to optimise the coupling of the photonic crystal and the mode overlap with the quantum wells. Design criteria include the positioning of the quantum well and the photonic crystal laye...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics Vol. 51; no. 2; pp. 02BG05 - 02BG05-3
Main Authors: Williams, David M, Groom, Kristian M, Stevens, Ben J, Childs, David T. D, Taylor, Richard J. E, Khamas, Salam, Hogg, Richard A, Ikeda, Naoki, Sugimoto, Yoshimasa
Format: Journal Article
Language:English
Published: The Japan Society of Applied Physics 01-02-2012
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The waveguide design of a GaAs based, epitaxially regrown photonic crystal surface emitting laser is discussed so as to optimise the coupling of the photonic crystal and the mode overlap with the quantum wells. Design criteria include the positioning of the quantum well and the photonic crystal layers, and the effect of varying aluminium composition in the lower cladding layer. Room-temperature, pulsed laser oscillation is demonstrated.
Bibliography:Schematic of structure indicating epitaxial growth materials and distance of photonic crystal from quantum wells, $D$. Normalised mode profiles for varying aluminium compositions in the lower cladding with quantum well and photonic crystal positions indicated. Photonic crystal coupling and quantum well confinement factor as a function of aluminium composition in the lower cladding at $D = 80$ nm. Photonic crystal coupling as $D$ is increased for varying aluminium compositions in the lower cladding. Inset: Quantum well confinement factor as a function of aluminium composition for $D = 80$ and 580 nm. Electroluminescence spectra for pulsed conditions at room temperature. (a) Light output-injection current characteristics. (b) Dark field (002) transmission electron microscope image of active region and photonic crystal layer.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.51.02BG05