GMR and magnetodynamics of MnIr spin valves depending on growth order of FM and AFM Layers

• Published in: IEEE transactions on magnetics Vol. 41; no. 10; pp. 2580 - 2582
• Main Authors: Chan-Gyu Lee, Gornakov, V.S., Bon-Heon Koo, Shin, K.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01-10-2005; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Anisotropic magnetoresistance; Antiferromagnetic materials; Giant magnetoresistance; Giant magnetoresistance (GMR); imaging; Magnetic anisotropy; Magnetic domains; Magnetic fields; magnetic layered films; Magnetism; Magnetization reversal; Perpendicular magnetic anisotropy; Spin valves; Through-silicon vias
• ISSN: 0018-9464; 1941-0069
• DOI: 10.1109/TMAG.2005.854754

We have investigated the influence of deposition order of spin-valve (SV) layers on the giant magnetoresistance and magnetic domain structures of top-deposited Si-Ta-Co-Cu-Co-Ir/sub 20/Mn/sub 80/-Ta (TSV) and bottom-deposited Si-Ta-Ir/sub 20/Mn/sub 80/-Co-Cu-Co-Ta (BSV). The TSV has a maximum MR ratio of about 9.6%, whereas that of the BSV is about 3%. Magnetooptical imaging revealed that the magnetization reversal of both samples occurs by nucleation, extension, and annihilation of microsize domains. It was found that, unlike the TSV, the BSV changes its unidirectional anisotropy in an applied magnetic field. The difference in the domain behavior and in the GMR of the spin valves with top and bottom antiferromagnetic layer deposition could be attributed to differences in defect structures.