Assessing the forming temperature role on amorphous and polycrystalline HfO2-based 4 kbit RRAM arrays performance

• Published in: Microelectronic engineering Vol. 178; pp. 1 - 4
• Main Authors: Perez, E., Bondesan, L., Grossi, A., Zambelli, C., Olivo, P., Wenger, Ch
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier BV 25-06-2017
• Subjects: Forming; Hafnium oxide; Polycrystals; Stability analysis; Switching; Temperature
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2017.04.003

The impact of temperature during the forming operation on the electrical cells performance and the post-programming stability were evaluated in amorphous and polycrystalline HfO2-based arrays. Forming (between -40 and 150 °C), reset and set (at room temperature) operations were applied using the incremental step pulse with verify algorithm (ISPVA). The improvements achieved on the forming operation in terms of time and voltages reduction do not impact the subsequent reset/set results. ISPVA perturbations in LRS/HRS current distributions are almost negligible after the first reset/set operation. In this study the best improvement in forming operation in terms of yield, voltage values and cell-to-cell variability is achieved in polycrystalline samples at 80 °C.