Cryotronic Low‐Powered Strained Polymorphic Photodetector Functionalized by Palladium Incorporated Tin Diselenide

• Published in: Advanced optical materials Vol. 10; no. 20
• Main Authors: Gupta, Shubham Umeshkumar, Dalvaniya, Ankit G., Chauhan, Payal, Patel, Keeritkumar D., Solanki, Gunvant K., Pathak, Vivek M., Jha, Prafulla K.
• Format: Journal Article
• Language: English
• Published: Weinheim Wiley Subscription Services, Inc 01-10-2022
• Subjects: Cryogenic temperature; cryotronics; Crystal growth; Displays; Materials science; metal dichalcogenides; Optics; Optoelectronic devices; optoelectronics; Palladium; Photometers; Polymorphism; Single crystals; single‐crystal photodetector
• ISSN: 2195-1071; 2195-1071
• DOI: 10.1002/adom.202201302

Researchers’ challenging task is to develop a material that can bear extreme environmental conditions. In this context, ‘metal dichalcogenide’ based solid‐state devices are highly beneficial for cryogenic optoelectronic applications but rarely reported. Herein, novel meta‐materials PdxSn1−xSe2 (x = 0.0, 0.2, 0.4) and their photodetector application are introduced. These ternary crystals are grown by direct vapour transport (DVT) technique in which palladium incorporated SnSe2 crystals exhibit polymorphism of hexagonal‐orthorhombic multiphase. PdxSn1−xSe2 (x = 0.0, 0.2, 0.4) single crystal photodetectors (SCPDs) demonstrate excellent photodetection in which SCPD functionalized by Pd0.4Sn0.6Se2 displays superior photoresponse. Cryogenic temperature directed blue‐shifting and sharpening of Raman peak displays noteworthy thermal‐sensing ability. Captivatingly, 10 µV low‐powered Pd0.4Sn0.6Se2 SCPD demonstrates substantial photodetection with 2.41 × 108 Jones detectivity at the cryogenic temperature of 10 K. To the best of the authors’ knowledge, a photosensor that displays excellent photodetection at a very low bias of 10 µV applied to the detector at the cryogenic temperature of 10 K is reported for the first time by them in present investigation. Higher stability, reproductiveness, and a low‐powered operating ability at a cryogenic temperature of 10 K declares Pd0.4Sn0.6Se2 as a potential candidate to design next‐generation low‐powered optoelectronic applications in cryotronics.
A polymorphic, strained, and 10 µV low‐powered single crystal photodetector (SCPD) functionalized by Pd0.4Sn0.6Se2 alloy demonstrates substantial optoelectronics property with detectivity of 2.41 × 108 Jones at a cryogenic temperature of 10 K. Highly stable photodetection and low‐powered operating capabilities at cryogenic temperature make Pd0.4Sn0.6S2 SCPD a suitable material for future low‐powered cryotronics and optoelectronic device application.