Effect of hydrogen on carbon incorporation in indium antimonide layers grown by metalorganic magnetron sputtering

Effect of hydrogen on carbon incorporation in indium antimonide layers grown by metalorganic magnetron sputtering

Secondary ion mass spectrometry measurements revealed a high level of unintentional carbon doping in heteroepitaxial InSb layers grown by metalorganic magnetron sputtering. The addition of molecular hydrogen to the sputtering gas resulted in an order of magnitude decrease in the carbon content of th...

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Bibliographic Details
Published in:Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vol. 7; no. 3; pp. 1215 - 1219
Main Authors: Rao, T. Sudersena, Webb, J. B., Beaulieu, Y., Brebner, J. L., Noad, J. P., Jackman, J.
Format: Journal Article
Language:English
Published: 01-05-1989
Subjects:
ORGANOMETALLIC COMPOUNDS
CRYSTAL GROWTH
CRYSTAL DOPING
MASS SPECTROSCOPY
CARBON ADDITIONS
IMPURITIES
ANTIMONY COMPOUNDS
CHEMICAL COMPOSITION
LAYERS
SPUTTERING
InSb
MAGNETRONS
INDIUM COMPOUNDS
EXPERIMENTAL DATA
SEMICONDUCTOR MATERIALS
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Summary:Secondary ion mass spectrometry measurements revealed a high level of unintentional carbon doping in heteroepitaxial InSb layers grown by metalorganic magnetron sputtering. The addition of molecular hydrogen to the sputtering gas resulted in an order of magnitude decrease in the carbon content of the as‐grown InSb layers. Mass spectrometric studies of the growth environment indicated methane as the major by‐product of trimethylindium breakup. The relative abundance of methane in the growth chamber was found to increase with substrate temperature and with the addition of hydrogen and/or a plasma discharge.
ISSN:0734-2101
1520-8559
DOI:10.1116/1.576257