Optimization of Non-fullerene Organic Photovoltaics Through Interface Engineering with Graphene Oxide: A Numerical Simulation

• Published in: Journal of electronic materials Vol. 53; no. 3; pp. 1539 - 1550
• Main Authors: Fauji, Najmudin, Kardiman, Efelina, Vita, Hakim, Muhammad Fahmi, Suci, Farradina Choria, Hanifi, Rizal, Gusniar, Iwan Nugraha, Widianto, Eri
• Format: Journal Article
• Language: English
• Published: New York Springer US 01-03-2024; Springer Nature B.V
• Subjects: Characterization and Evaluation of Materials; Chemistry and Materials Science; Defects; Efficiency; Electrodes; Electronics and Microelectronics; Energy conversion efficiency; Engineering; Fullerenes; Graphene; Heterojunctions; Instrumentation; Interfaces; Materials Science; Open circuit voltage; Optical and Electronic Materials; Optimization; Original Research Article; Photovoltaic cells; Short circuit currents; Simulation; Solid State Physics; Thickness; graphene oxide; Organic photovoltaic; hole transport; SCAPS-1D; non-fullerene
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-023-10911-y

In bulk-heterojunction (BHJ) organic photovoltaics (OPVs), non-fullerene acceptors (NFAs) have lately surpassed their fullerene counterparts in photovoltaic performance. This progress in NFA OPVs may encourage the exploration of varied OPV device architectures, either deviating from or expanding upon the fundamental BHJ structure. This study employs numerical simulations on PBDB-T:NCBDT OPVs using graphene oxide (GO) as the hole transport layer (HTL) to examine the influence of thickness, defect density, and interface defects on device performance. Following optimization, the device exhibits short-circuit current (
J
SC
) of 27.92 mA cm
−2
, open-circuit voltage (
V
OC
) of 1.08 V, fill factor (FF) of 72.57%, and power conversion efficiency (PCE) of 21.84%. These findings support the further development of NFA-OPVs employing GO as the HTL.