Cobalt disilicide epitaxial growth on the silicon (111) surface

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Published in:Physical review. B, Condensed matter Vol. 29; no. 6; pp. 3391 - 3397
Main Authors: PIRRI, C, PERUCHETTI, J. C, GEWINNER, G
Format: Journal Article
Language:English
Published: Woodbury, NY American Physical Society 01-01-1984
American Institute of Physics
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Author GEWINNER, G
PIRRI, C
PERUCHETTI, J. C
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Issue 6
Keywords Crystal growth
Annealing
Photoelectron spectrum
Epitaxy
Solid solid interface
Transition metal Compounds
Early stage
X ray
Experimental study
Inorganic compound
Thin film
Ultraviolet radiation
Cobalt Silicides
LEED diffraction
Chemical diffusion
Language English
License CC BY 4.0
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PublicationPlace Woodbury, NY
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PublicationTitle Physical review. B, Condensed matter
PublicationYear 1984
Publisher American Physical Society
American Institute of Physics
Publisher_xml – name: American Physical Society
– name: American Institute of Physics
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SubjectTerms Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
Title Cobalt disilicide epitaxial growth on the silicon (111) surface
Volume 29
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