Cobalt disilicide epitaxial growth on the silicon (111) surface
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Published in: | Physical review. B, Condensed matter Vol. 29; no. 6; pp. 3391 - 3397 |
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Main Authors: | , , |
Format: | Journal Article |
Language: | English |
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Woodbury, NY
American Physical Society
01-01-1984
American Institute of Physics |
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Author | GEWINNER, G PIRRI, C PERUCHETTI, J. C |
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Author_xml | – sequence: 1 givenname: C surname: PIRRI fullname: PIRRI, C organization: Univ. Haute-Alsace, inst. sci. exactes appliquées, Mulhouse 68093, France – sequence: 2 givenname: J. C surname: PERUCHETTI fullname: PERUCHETTI, J. C organization: Univ. Haute-Alsace, inst. sci. exactes appliquées, Mulhouse 68093, France – sequence: 3 givenname: G surname: GEWINNER fullname: GEWINNER, G organization: Univ. Haute-Alsace, inst. sci. exactes appliquées, Mulhouse 68093, France |
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Cites_doi | 10.1063/1.92007 10.1016/0039-6028(80)90573-7 10.1116/1.571077 10.1088/0022-3719/14/35/008 10.1116/1.582596 10.1116/1.570618 10.1103/PhysRevB.25.3627 10.1103/PhysRevB.23.2916 10.1116/1.569042 10.1016/0038-1098(81)90075-2 10.1016/0039-6028(82)90543-X 10.1016/0038-1098(82)90696-2 10.1063/1.93699 10.1016/0039-6028(83)90789-6 10.1016/0039-6028(80)90187-9 10.1116/1.571800 10.1103/PhysRevB.24.1120 10.1088/0022-3719/3/2/010 10.1103/PhysRevB.25.4981 10.1103/PhysRevLett.46.1033 10.1103/PhysRevLett.43.1836 10.1063/1.92605 10.1103/PhysRevLett.46.600 10.1063/1.93234 10.1016/0040-6090(82)90095-5 10.1063/1.331223 10.1103/PhysRevB.28.1168 10.1103/PhysRevLett.50.429 10.1063/1.321451 10.1016/0040-6090(82)90098-0 10.1063/1.91825 10.1116/1.570560 10.1016/0040-6090(82)90089-X 10.1016/0039-6028(73)90152-0 10.1103/PhysRevB.24.4552 |
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Keywords | Crystal growth Annealing Photoelectron spectrum Epitaxy Solid solid interface Transition metal Compounds Early stage X ray Experimental study Inorganic compound Thin film Ultraviolet radiation Cobalt Silicides LEED diffraction Chemical diffusion |
Language | English |
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References | G. J. Van Gurp (PhysRevB.29.3391Cc9R1) 1975; 46 T. Yokotsuka (PhysRevB.29.3391Cc10R1) 1981; 39 A. Glachant (PhysRevB.29.3391Cc14R1) 1973; 40 R. T. Tung (PhysRevB.29.3391Cc5R1) 1982; 40 G. Castro (PhysRevB.29.3391Cc29R1) 1982; 117 F. Ringeisen (PhysRevB.29.3391Cc16R1) 1983; 1 F. Comin (PhysRevB.29.3391Cc27R1) F. J. Himpsel (PhysRevB.29.3391Cc11R1) 1981; 24 A. Franciosi (PhysRevB.29.3391Cc36R1) 1982; 25 P. J. Grunthaner (PhysRevB.29.3391Cc18R1) 1980; 17 J. M. Gibson (PhysRevB.29.3391Cc33R1) 1982; 41 J. M. Gibson (PhysRevB.29.3391Cc7R1) 1982; 93 L. J. Chen (PhysRevB.29.3391Cc6R1) 1982; 93 G. V. Hansson (PhysRevB.29.3391Cc37R1) 1981; 46 G. W. Rubloff (PhysRevB.29.3391Cc3R1) 1982; 93 S. Saitoh (PhysRevB.29.3391Cc4R1) 1980; 37 F. Houzay (PhysRevB.29.3391Cc13R1) 1980; 99 J. A. Venables (PhysRevB.29.3391Cc25R1) 1980; 95 A. Franciosi (PhysRevB.29.3391Cc19R1) 1982; 21 G. Rossi (PhysRevB.29.3391Cc20R1) 1982; 25 J. Derrien (PhysRevB.29.3391Cc35R1) 1983; 124 D. Bolmont (PhysRevB.29.3391Cc38R1) 1981; 24 E. Louis (PhysRevB.29.3391Cc22R1) 1982; 44 G. E. Rhead (PhysRevB.29.3391Cc24R1) 1976; 13 Y. J. Chabal (PhysRevB.29.3391Cc12R1) 1981; 46 S. P. Murarka (PhysRevB.29.3391Cc1R1) 1980; 17 O. Bisi (PhysRevB.29.3391Cc21R1) 1981; 14 J. Tersoff (PhysRevB.29.3391Cc28R1) 1983; 28 (PhysRevB.29.3391Cc2R1) 1978 J. H. Weaver (PhysRevB.29.3391Cc32R1) 1981; 23 J. Derrien (PhysRevB.29.3391Cc34R1) 1981; 39 K. N. Tu (PhysRevB.29.3391Cc31R1) 1982; 53 J. C. Bean (PhysRevB.29.3391Cc8R1) 1980; 37 J. L. Frerouf (PhysRevB.29.3391Cc23R1) 1979; 43 R. T. Tung (PhysRevB.29.3391Cc26R1) 1983; 50 S. Doniach (PhysRevB.29.3391Cc17R1) 1970; 3 I. Abbati (PhysRevB.29.3391Cc15R1) 1981; 19 |
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Murarka – volume: 93 start-page: 21 year: 1982 ident: PhysRevB.29.3391Cc3R1 publication-title: Thin Solid Films doi: 10.1016/0040-6090(82)90089-X contributor: fullname: G. W. Rubloff – volume: 40 start-page: 683 year: 1973 ident: PhysRevB.29.3391Cc14R1 publication-title: Surf. Sci. doi: 10.1016/0039-6028(73)90152-0 contributor: fullname: A. Glachant – volume: 24 start-page: 4552 year: 1981 ident: PhysRevB.29.3391Cc38R1 publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.24.4552 contributor: fullname: D. Bolmont |
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SubjectTerms | Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology |
Title | Cobalt disilicide epitaxial growth on the silicon (111) surface |
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