Cobalt disilicide epitaxial growth on the silicon (111) surface

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Bibliographic Details
Published in:	Physical review. B, Condensed matter Vol. 29; no. 6; pp. 3391 - 3397
Main Authors:	PIRRI, C, PERUCHETTI, J. C, GEWINNER, G
Format:	Journal Article
Language:	English
Published:	Woodbury, NY American Physical Society 01-01-1984 American Institute of Physics
Subjects:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology Crystal growth Annealing Photoelectron spectrum Epitaxy Solid solid interface Transition metal Compounds Early stage X ray Experimental study Inorganic compound Thin film Ultraviolet radiation Cobalt Silicides LEED diffraction Chemical diffusion
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Description
ISSN:	0163-1829 1095-3795
DOI:	10.1103/PhysRevB.29.3391