Preparing an ultra-smooth TaW alloy surface with chemical mechanical polishing via controlling galvanic corrosion

An ultra-smooth tantalum alloy surface is essential to prepare a high-quality coating. This work employed the chemical mechanical polishing (CMP) technique to process Ta-12W alloy. The effect of H 2 O 2 on the CMP performance was investigated. The results revealed that, as the H 2 O 2 concentration...

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Bibliographic Details
Published in:Journal of applied electrochemistry Vol. 54; no. 4; pp. 839 - 850
Main Authors: Zhao, Qijian, Tian, Chuandong, Zheng, Jiaxin, Sun, Pengfei, Jiang, Liang, Qian, Linmao
Format: Journal Article
Language:English
Published: Dordrecht Springer Netherlands 01-04-2024
Springer Nature B.V
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Summary:An ultra-smooth tantalum alloy surface is essential to prepare a high-quality coating. This work employed the chemical mechanical polishing (CMP) technique to process Ta-12W alloy. The effect of H 2 O 2 on the CMP performance was investigated. The results revealed that, as the H 2 O 2 concentration increases at acidic pH, the material removal rate (MRR) of Ta-12W alloy gradually increases while the surface roughness sharply decreases and levels off. After adding 4 wt% H 2 O 2 , the surface roughness S a reaches about 0.4 nm in 97.9 μm × 97.9 μm and 0.068 nm in 1 μm × 1 μm. The surface becomes ultra-smooth, and the substrate remains intact. For the CMP mechanism, adding H 2 O 2 can promote the formation of a relatively uniform and passive film, mainly consisting of evenly distributed tantalum oxides and tungsten oxides, suppressing corrosion. Therefore, the surface quality improves. Compared with hard metallic tantalum and tungsten, their oxides can be removed readily by silica abrasive particles presumably through chemical bonds and mechanical abrasion. Hence, the MRR increases. Additionally, potassium ions may contribute to the removal of tantalum. This study provides a feasible method to attain tantalum alloys of high surface quality for coating. Graphical Abstract
ISSN:0021-891X
1572-8838
DOI:10.1007/s10800-023-01986-w