Investigations of the Structural, Mechanical and Optoelectronic Attributes of Rb2TlB′I6 (B′ = As, Ga) Double Perovskites for Photovoltaics
Double perovskites based on rubidium have demonstrated potential for obtaining high solar cell power conversion efficiencies. Their distinct crystal structure and electrical characteristics influence these materials’ potential as effective light absorbers. In this present manuscript, a detailed scru...
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Published in: | Journal of inorganic and organometallic polymers and materials Vol. 34; no. 9; pp. 3984 - 3994 |
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Main Authors: | , , , , , , , |
Format: | Journal Article |
Language: | English |
Published: |
New York
Springer US
2024
Springer Nature B.V |
Subjects: | |
Online Access: | Get full text |
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Summary: | Double perovskites based on rubidium have demonstrated potential for obtaining high solar cell power conversion efficiencies. Their distinct crystal structure and electrical characteristics influence these materials’ potential as effective light absorbers. In this present manuscript, a detailed scrutiny of the physical aspects of halide perovskites Rb
2
TlAsI
6
and Rb
2
TlGaI
6
is presented using density functional theory framework implanted in Wien2K code using. Modified Becke Johnson potential is employed to treat the exchange–correlation effects. A computed tolerance factor, octahedral tilting, and formation energy ensure the structural and thermodynamic stability of given structures. Three independent elastic constants and mechanical properties were computed using the Thomas Charpin method. Ductile nature of Rb
2
TlAsI
6
and brittle nature for Rb
2
TlGaI
6
is revealed from computed mechanical attributes. The Debye temperature for Rb
2
TlGaI
6
(171.32 K) is noted higher than Rb
2
TlAsI
6
(144.53 K). Electronic properties revealed a direct bandgap (1.09 eV) for Rb
2
TlAsI
6
and an indirect bandgap (1.2 eV) for Rb
2
TlGaI
6
. Optical properties indicate high polarization and absorption of incident light, which is suitable for photovoltaic applications in the visible spectrum. |
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ISSN: | 1574-1443 1574-1451 |
DOI: | 10.1007/s10904-024-03051-1 |