A random noise reduction method for an amorphous silicon photoconversion layer overlaid CCD imager

• Published in: IEEE transactions on electron devices Vol. 44; no. 10; pp. 1663 - 1666
• Main Authors: Nakamura, N., Ohsawa, S., Matsunaga, Y., Yoshida, O.
• Format: Journal Article
• Language: English
• Published: IEEE 01-10-1997
• Subjects: Amorphous silicon; Capacitance; Charge coupled devices; Diodes; Electrons; Image storage; Noise generators; Noise reduction; Semiconductor device noise; Signal to noise ratio
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/16.628820

A novel random noise reduction (RNR) method, which can reduce random noise generated in a storage diode (SD), has been proposed and evaluated with a cell test element. The RNR cell structure features an RNR transistor with a second storage diode, which is inserted between the SD and a vertical CCD (V-CCD). The RNR transistor controls the transfer channel potential and suppresses the random noise generated in the SD. Net first storage diode capacitance with the RNR transistor can be reduced down to (C/sub f//spl times/C/sub a/)/(C/sub f/+m/spl times/C/sub a/), where C/sub f/ is the second storage diode capacitance, C/sub a/ is the first storage diode capacitance, and m is the channel potential modulation factor. Experimentally, the RNR cell can reduce the random noise in the SD from 42 electrons [r.m.s.] down to 18 electrons [r.m.s.] for the SD capacitance of 5 fF. This makes it possible for the photoconversion layer overlaid CCD imager with the RNR cells to reproduce video images with a high S/N ratio.