Improvement of slow light performance for vertical-cavity surface-emitting laser using coupled cavity structure

We propose a vertical cavity semiconductor emitting laser (VCSEL) using a coupled-cavity (CC) design to broaden the bandwidths of gain and delay spectra. The structure is formed by constructing a passive cavity coupled with the active cavity. By rendering the strength of the two resonant cavities, t...

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Published in:Optoelectronics letters Vol. 8; no. 6; pp. 405 - 408
Main Author: 马雅男 罗斌 潘炜 闫连山 邹喜华 易安林 叶佳 温坤华
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Language:English
Published: Heidelberg Tianjin University of Technology 01-11-2012
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Abstract We propose a vertical cavity semiconductor emitting laser (VCSEL) using a coupled-cavity (CC) design to broaden the bandwidths of gain and delay spectra. The structure is formed by constructing a passive cavity coupled with the active cavity. By rendering the strength of the two resonant cavities, the increased gain bandwidth by 340% and the increased delay bandwidth by 800% are achieved as compared with the signal-cavity (SC) VCSEL. The wideband spectra present more square-like passband which is expected for slow light system. By using it, a 20 Gbit/s super Gaussian signal is delayed by about 13 ps with high quality.
AbstractList We propose a vertical cavity semiconductor emitting laser (VCSEL) using a coupled-cavity (CC) design to broaden the bandwidths of gain and delay spectra. The structure is formed by constructing a passive cavity coupled with the active cavity. By rendering the strength of the two resonant cavities, the increased gain bandwidth by 340% and the increased delay bandwidth by 800% are achieved as compared with the signal-cavity (SC) VCSEL. The wideband spectra present more square-like passband which is expected for slow light system. By using it, a 20 Gbit/s super Gaussian signal is delayed by about 13 ps with high quality.
We propose a vertical cavity semiconductor emitting laser (VCSEL) using a coupled-cavity (CC) design to broaden the bandwidths of gain and delay spectra. The structure is formed by constructing a passive cavity coupled with the active cavity. By rendering the strength of the two resonant cavities, the increased gain bandwidth by 340% and the increased delay bandwidth by 800% are achieved as compared with the signal-cavity (SC) VCSEL. The wideband spectra present more square-like passband which is expected for slow light system. By using it, a 20 Gbit/s super Gaussian signal is delayed by about 13 ps with high quality.
Author 马雅男 罗斌 潘炜 闫连山 邹喜华 易安林 叶佳 温坤华
AuthorAffiliation School of Information Science and Technology, Southwest Jiaotong University, Chengdu 610031, China
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Cites_doi 10.1088/0256-307X/22/10/028
10.1109/3.903078
10.1109/JLT.2006.887188
10.7498/aps.46.1731
10.1038/17561
10.1109/68.473458
10.3788/COL201109.051401
10.7498/aps.61.014215
10.1364/OPEX.13.007899
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Keywords Resonant Wavelength
Stimulate Brillouin Scat
Passive Cavity
Flat Gain
Wideband Spectrum
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We propose a vertical cavity semiconductor emitting laser (VCSEL) using a coupled-cavity (CC) design to broaden the bandwidths of gain and delay spectra. The structure is formed by constructing a passive cavity coupled with the active cavity. By rendering the strength of the two resonant cavities, the increased gain bandwidth by 340% and the increased delay bandwidth by 800% are achieved as compared with the signal-cavity (SC) VCSEL. The wideband spectra present more square-like passband which is expected for slow light system. By using it, a 20 Gbit/s super Gaussian signal is delayed by about 13 ps with high quality.
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Snippet We propose a vertical cavity semiconductor emitting laser (VCSEL) using a coupled-cavity (CC) design to broaden the bandwidths of gain and delay spectra. The...
We propose a vertical cavity semiconductor emitting laser (VCSEL) using a coupled-cavity (CC) design to broaden the bandwidths of gain and delay spectra. The...
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SubjectTerms Lasers
Optical Devices
Optics
Photonics
Physics
Physics and Astronomy
VCSEL
光性能
半导体
垂直腔面发射激光器
带宽和
耦合腔
腔结构
超高斯信号
Title Improvement of slow light performance for vertical-cavity surface-emitting laser using coupled cavity structure
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