Improvement of slow light performance for vertical-cavity surface-emitting laser using coupled cavity structure

We propose a vertical cavity semiconductor emitting laser (VCSEL) using a coupled-cavity (CC) design to broaden the bandwidths of gain and delay spectra. The structure is formed by constructing a passive cavity coupled with the active cavity. By rendering the strength of the two resonant cavities, t...

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Bibliographic Details
Published in:Optoelectronics letters Vol. 8; no. 6; pp. 405 - 408
Main Author: 马雅男 罗斌 潘炜 闫连山 邹喜华 易安林 叶佳 温坤华
Format: Journal Article
Language:English
Published: Heidelberg Tianjin University of Technology 01-11-2012
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Summary:We propose a vertical cavity semiconductor emitting laser (VCSEL) using a coupled-cavity (CC) design to broaden the bandwidths of gain and delay spectra. The structure is formed by constructing a passive cavity coupled with the active cavity. By rendering the strength of the two resonant cavities, the increased gain bandwidth by 340% and the increased delay bandwidth by 800% are achieved as compared with the signal-cavity (SC) VCSEL. The wideband spectra present more square-like passband which is expected for slow light system. By using it, a 20 Gbit/s super Gaussian signal is delayed by about 13 ps with high quality.
Bibliography:12-1370/TN
We propose a vertical cavity semiconductor emitting laser (VCSEL) using a coupled-cavity (CC) design to broaden the bandwidths of gain and delay spectra. The structure is formed by constructing a passive cavity coupled with the active cavity. By rendering the strength of the two resonant cavities, the increased gain bandwidth by 340% and the increased delay bandwidth by 800% are achieved as compared with the signal-cavity (SC) VCSEL. The wideband spectra present more square-like passband which is expected for slow light system. By using it, a 20 Gbit/s super Gaussian signal is delayed by about 13 ps with high quality.
ISSN:1673-1905
1993-5013
DOI:10.1007/s11801-012-2302-x