Improvement of slow light performance for vertical-cavity surface-emitting laser using coupled cavity structure
We propose a vertical cavity semiconductor emitting laser (VCSEL) using a coupled-cavity (CC) design to broaden the bandwidths of gain and delay spectra. The structure is formed by constructing a passive cavity coupled with the active cavity. By rendering the strength of the two resonant cavities, t...
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Published in: | Optoelectronics letters Vol. 8; no. 6; pp. 405 - 408 |
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Main Author: | |
Format: | Journal Article |
Language: | English |
Published: |
Heidelberg
Tianjin University of Technology
01-11-2012
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Subjects: | |
Online Access: | Get full text |
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Summary: | We propose a vertical cavity semiconductor emitting laser (VCSEL) using a coupled-cavity (CC) design to broaden the bandwidths of gain and delay spectra. The structure is formed by constructing a passive cavity coupled with the active cavity. By rendering the strength of the two resonant cavities, the increased gain bandwidth by 340% and the increased delay bandwidth by 800% are achieved as compared with the signal-cavity (SC) VCSEL. The wideband spectra present more square-like passband which is expected for slow light system. By using it, a 20 Gbit/s super Gaussian signal is delayed by about 13 ps with high quality. |
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Bibliography: | 12-1370/TN We propose a vertical cavity semiconductor emitting laser (VCSEL) using a coupled-cavity (CC) design to broaden the bandwidths of gain and delay spectra. The structure is formed by constructing a passive cavity coupled with the active cavity. By rendering the strength of the two resonant cavities, the increased gain bandwidth by 340% and the increased delay bandwidth by 800% are achieved as compared with the signal-cavity (SC) VCSEL. The wideband spectra present more square-like passband which is expected for slow light system. By using it, a 20 Gbit/s super Gaussian signal is delayed by about 13 ps with high quality. |
ISSN: | 1673-1905 1993-5013 |
DOI: | 10.1007/s11801-012-2302-x |