Analysis of the abnormal voltage-current behaviors on localized carriers of InGaN/GaN multiple quantum well from electron blocking layer
The effect of an electron blocking layer (EBL) on the V — I curves for GaN/InGaN multiple quantum wells is investigated. For the first time, we found that the curves intersected at 3.012 V, and we investigated the reason for the intersection. The forward voltage in LEDs with a p -AlGaN EBL is larger...
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| Published in: | Journal of the Korean Physical Society Vol. 63; no. 9; pp. 1784 - 1788 |
|---|---|
| Main Authors: | , , , , , |
| Format: | Journal Article |
| Language: | English |
| Published: |
Dordrecht
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01-11-2013
한국물리학회 |
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| Abstract | The effect of an electron blocking layer (EBL) on the
V — I
curves for GaN/InGaN multiple quantum wells is investigated. For the first time, we found that the curves intersected at 3.012 V, and we investigated the reason for the intersection. The forward voltage in LEDs with a
p
-AlGaN EBL is larger than it is without the
p
-AlGaN EBL at low injection currents because the Mg-doping efficiency for the
p
-GaN layer is higher than that for the
p
-AlGaN layer. However, the forward voltage in LEDs with a
p
-AlGaN EBL is smaller than it is without the
p
-AlGaN EBL at high injection currents because the carriers overflow from the active layer when the injection current increases in LEDs without a
p
-AlGaN EBL, in case of LEDs with a
p
-AlGaN EBL, the carriers are blocked by the EBL. |
|---|---|
| AbstractList | The effect of an electron blocking layer (EBL) on the V − I curves for GaN/InGaN multiplequantum wells is investigated. For the first time, we found that the curves intersected at 3.012 V,and we investigated the reason for the intersection. The forward voltage in LEDs with a p-AlGaNEBL is larger than it is without the p-AlGaN EBL at low injection currents because the Mg-dopingefficiency for the p-GaN layer is higher than that for the p-AlGaN layer. However, the forwardvoltage in LEDs with a p-AlGaN EBL is smaller than it is without the p-AlGaN EBL at highinjection currents because the carriers overflow from the active layer when the injection currentincreases in LEDs without a p-AlGaN EBL, in case of LEDs with a p-AlGaN EBL, the carriers areblocked by the EBL. KCI Citation Count: 0 The effect of an electron blocking layer (EBL) on the V — I curves for GaN/InGaN multiple quantum wells is investigated. For the first time, we found that the curves intersected at 3.012 V, and we investigated the reason for the intersection. The forward voltage in LEDs with a p -AlGaN EBL is larger than it is without the p -AlGaN EBL at low injection currents because the Mg-doping efficiency for the p -GaN layer is higher than that for the p -AlGaN layer. However, the forward voltage in LEDs with a p -AlGaN EBL is smaller than it is without the p -AlGaN EBL at high injection currents because the carriers overflow from the active layer when the injection current increases in LEDs without a p -AlGaN EBL, in case of LEDs with a p -AlGaN EBL, the carriers are blocked by the EBL. |
| Author | Kim, Jin Soo Kim, Byunggu Lee, Dong-Yul Kim, Jong Su Leem, Jae-Young Nam, Giwoong |
| Author_xml | – sequence: 1 givenname: Giwoong surname: Nam fullname: Nam, Giwoong organization: Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University – sequence: 2 givenname: Byunggu surname: Kim fullname: Kim, Byunggu organization: Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University – sequence: 3 givenname: Jae-Young surname: Leem fullname: Leem, Jae-Young email: jyleem@inje.ac.kr organization: Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University – sequence: 4 givenname: Dong-Yul surname: Lee fullname: Lee, Dong-Yul organization: LED R&D team, Samsung Electronics Co. Ltd – sequence: 5 givenname: Jong Su surname: Kim fullname: Kim, Jong Su organization: Department of Physics, Yeungnam University – sequence: 6 givenname: Jin Soo surname: Kim fullname: Kim, Jin Soo organization: Research Center of Advanced Materials Development (RCAMD), Division of Advanced Materials Engineering, Chonbuk National University |
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| Keywords | Electron blocking layer Electroluminescence Gallium nitride Photoluminescence |
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| Snippet | The effect of an electron blocking layer (EBL) on the
V — I
curves for GaN/InGaN multiple quantum wells is investigated. For the first time, we found that the... The effect of an electron blocking layer (EBL) on the V − I curves for GaN/InGaN multiplequantum wells is investigated. For the first time, we found that the... |
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| SubjectTerms | Mathematical and Computational Physics Particle and Nuclear Physics Physics Physics and Astronomy Theoretical 물리학 |
| Title | Analysis of the abnormal voltage-current behaviors on localized carriers of InGaN/GaN multiple quantum well from electron blocking layer |
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