Analysis of the abnormal voltage-current behaviors on localized carriers of InGaN/GaN multiple quantum well from electron blocking layer

• Published in: Journal of the Korean Physical Society Vol. 63; no. 9; pp. 1784 - 1788
• Main Authors: Nam, Giwoong, Kim, Byunggu, Leem, Jae-Young, Lee, Dong-Yul, Kim, Jong Su, Kim, Jin Soo
• Format: Journal Article
• Language: English
• Published: Dordrecht Springer Netherlands 01-11-2013; 한국물리학회
• Subjects: Mathematical and Computational Physics; Particle and Nuclear Physics; Physics; Physics and Astronomy; Theoretical; 물리학; Electron blocking layer; Electroluminescence; Gallium nitride; Photoluminescence
• ISSN: 0374-4884; 1976-8524
• DOI: 10.3938/jkps.63.1784

The effect of an electron blocking layer (EBL) on the
V — I
curves for GaN/InGaN multiple quantum wells is investigated. For the first time, we found that the curves intersected at 3.012 V, and we investigated the reason for the intersection. The forward voltage in LEDs with a
p
-AlGaN EBL is larger than it is without the
p
-AlGaN EBL at low injection currents because the Mg-doping efficiency for the
p
-GaN layer is higher than that for the
p
-AlGaN layer. However, the forward voltage in LEDs with a
p
-AlGaN EBL is smaller than it is without the
p
-AlGaN EBL at high injection currents because the carriers overflow from the active layer when the injection current increases in LEDs without a
p
-AlGaN EBL, in case of LEDs with a
p
-AlGaN EBL, the carriers are blocked by the EBL.