Ordering of Ge quantum dots with buried Si dislocation networks

Ordering of Ge quantum dots with buried Si dislocation networks

Buried dislocation networks obtained by Si(001) wafer bonding pattern the free surface of the sample, giving rise to long-range undulations and short-range embossing, respectively, for flexion and rotation misalignement. Comparison with continuum-elasticity calculations reveals that this patterning...

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Bibliographic Details
Published in:Applied physics letters Vol. 80; no. 17; pp. 3078 - 3080
Main Authors: Leroy, F., Eymery, J., Gentile, P., Fournel, F.
Format: Journal Article
Language:English
Published: American Institute of Physics 29-04-2002
Subjects:
Condensed Matter
Electric power
Engineering Sciences
Materials
Materials Science
Micro and nanotechnologies
Microelectronics
Physics
Online Access:Get full text
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Summary:Buried dislocation networks obtained by Si(001) wafer bonding pattern the free surface of the sample, giving rise to long-range undulations and short-range embossing, respectively, for flexion and rotation misalignement. Comparison with continuum-elasticity calculations reveals that this patterning is enhanced by strain-driven overetching. These surfaces are a template for growth, and we show that Ge quantum dots can be ordered with a fourfold symmetry by proceeding a postgrowth annealing.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1474601