Analysis of the Pump Wavelength Dependence of a 1060-nm VECSEL

• Published in: IEEE photonics technology letters Vol. 24; no. 5; pp. 341 - 343
• Main Authors: Haupt, S., Furitsch, M., Lindberg, H. H., Pietzonka, I., Strauss, U., Bacher, G.
• Format: Journal Article
• Language: English
• Published: IEEE 01-03-2012
• Subjects: Absorption; External cavity; Laser excitation; Photonics; Pump lasers; semiconductor disk laser; semiconductor laser; surface-emitting laser; Vertical cavity surface emitting lasers; vertical-external-cavity surface-emitting laser (VECSEL) pump wavelength
• ISSN: 1041-1135; 1941-0174
• DOI: 10.1109/LPT.2011.2178823

We have developed an optically pumped infrared 1060-nm vertical-external-cavity surface-emitting laser for an application as a frequency doubled green laser in mobile projectors. The efficiency has been investigated as a function of pump wavelength and a differential efficiency η diff of 50% has been demonstrated using an 808-nm pump laser source. The usage of a longer pump wavelength decreases the quantum defect and increases the differential efficiency to over 52%. The pump light absorption in the chip is investigated as a function of pump wavelength and absorber thickness. A thicker absorber layer enables the usage of a longer pump wavelength and hence reduces the quantum defect further.