Defects Introduced by MeV-Energy Ion Implantation into Si Probed by a Monoenergetic Positron Beam

• Published in: Japanese Journal of Applied Physics Vol. 30; no. 8R; p. 1597
• Main Authors: Uedono, Akira, Wei, Long, Dosho, Chisei, Kondo, Hitoshi, Tamura, Shoichiro Tanigawa
• Format: Journal Article
• Language: English
• Published: 01-08-1991
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/JJAP.30.1597

Vacancy-type defects in 2-MeV B
+
-, 2-MeV P
+
- and 3-MeV As
+
-ion implanted Si(100) were studied by a monoenergetic positron beam. The depth distributions of vacancy-type defects were obtained from measurements of Doppler broadening profiles of the positron annihilation as a function of incident positron energy. The dominant defect species were identified as vacancy-clusters from their characteristic values of the lineshape parameter
S
. From isochronal annealing experiments for the P
+
-implanted specimen, two types of oxygen-vacancy complexes were found to coexist even after 1200°C annealing.