A polyacetylene:aluminum photodiode
The fabrication of a 1-cm2 (CH)x:Al Schottky photodiode with junction internal conversion efficiency of 0.30% and quantum efficiency approaching unity (hn≳2.8 eV) is reported. Device characteristics are presented. The effect of oxygen contamination is also discussed.
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| Published in: | Applied physics letters Vol. 38; no. 7; pp. 555 - 557 |
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| Main Authors: | , , |
| Format: | Journal Article |
| Language: | English |
| Published: |
01-04-1981
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| Online Access: | Get full text |
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| Summary: | The fabrication of a 1-cm2 (CH)x:Al Schottky photodiode with junction internal conversion efficiency of 0.30% and quantum efficiency approaching unity (hn≳2.8 eV) is reported. Device characteristics are presented. The effect of oxygen contamination is also discussed. |
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| Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
| ISSN: | 0003-6951 1077-3118 |
| DOI: | 10.1063/1.92410 |