Dense arrays of nanopores as x-ray lithography masks

Dense arrays of nanopores as x-ray lithography masks

An anodized aluminum oxide nanopore has been used as an x-ray lithography mask to achieve a feature size of ∼35 nm on the polymethylmethacrylate photoresist. The mask was exposed using synchrotron radiation and demonstrates the feasibility of forming large arrays of regular nanostructures.

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Bibliographic Details
Published in:Applied physics letters Vol. 84; no. 17; pp. 3388 - 3390
Main Authors: Knaack, S. A., Eddington, J., Leonard, Q., Cerrina, F., Onellion, M.
Format: Journal Article
Language:English
Published: 26-04-2004
Online Access:Get full text
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Description
Summary:An anodized aluminum oxide nanopore has been used as an x-ray lithography mask to achieve a feature size of ∼35 nm on the polymethylmethacrylate photoresist. The mask was exposed using synchrotron radiation and demonstrates the feasibility of forming large arrays of regular nanostructures.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1705724