Structure and C-V characteristics of PZ/PZT multilayer thin films (in PZ/PZT series sequences) prepared by sol-gel technique

Structure and C-V characteristics of PZ/PZT multilayer thin films (in PZ/PZT series sequences) prepared by sol-gel technique

Lead Zirconate (PbZrO 3 : PZ) and Lead Zirconium Titanate (PZT) multilayered thin films were prepared by sol-gel technique. Sets of films (each layer has a 450Å thickness) made by one PZ after one PZT layer are deposited 3 times successively. These films were annealed just one time after full deposi...

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Bibliographic Details
Published in:Ferroelectrics Vol. 260; no. 1; pp. 131 - 136
Main Authors: Bae, Se-Hwan, Jeon, Kie-Beom, Kim, Sung-Chul, Jin, Byung-Moon
Format: Journal Article
Language:English
Published: Taylor & Francis Group 01-01-2001
Subjects:
lead zirconate
lead zirconate titanate
multi-layer
sol-gel
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Summary:Lead Zirconate (PbZrO 3 : PZ) and Lead Zirconium Titanate (PZT) multilayered thin films were prepared by sol-gel technique. Sets of films (each layer has a 450Å thickness) made by one PZ after one PZT layer are deposited 3 times successively. These films were annealed just one time after full deposition. Two another sets of films were prepared with the same sequences but different annealing conditions. The mixed phase of ferro- and anti-ferroelectric phases are existed in films that were annealed at every single deposition. A flat voltage response will be testified by measuring C-V characteristics for these two different films.
ISSN:0015-0193
1563-5112
DOI:10.1080/00150190108016006