Electrical properties of chemically prepared nonstoichiometric CuIn(S,Se)2 thin films

• Published in: Bulletin of materials science Vol. 30; no. 2; pp. 135 - 139
• Main Authors: Bari, R. H., Patil, L. A., Soni, A., Okram, G. S.
• Format: Journal Article
• Language: English
• Published: Bangalore Springer Nature B.V 01-04-2007
• Subjects: Chemical composition; Copper; Deposition; Electrical properties; Energy dispersive X ray analysis; Glass substrates; Room temperature; Semiconductivity; Thin films; X ray analysis
• ISSN: 0250-4707; 0973-7669
• DOI: 10.1007/s12034-007-0024-7

Polycrystalline thin films of copper indium sulphoselenide [CuIn(S,Se)2] were deposited on glass substrate by chemical bath deposition technique. The deposition parameters such as pH, temperature and time were optimized. A set of films having different elemental compositions was prepared by varying Cu/In ratio from 1·87–12·15. The films were characterized by X-ray diffraction (XRD) and energy dispersive X-ray analysis (EDAX). The chemical composition of the CuIn(S,Se)2 was found to be nonstoichiometric. The d.c. conductivities of the films were studied below and near room temperature. The thermo-electric power of the films was also measured and type of semiconductivity was ascertained.