Influence of epitaxial growth on phase competition in Pr0.5Sr0.5MnO3 films

A series of Pr0.5Sr0.5MnO3 (PSMO) films with various thickness were epitaxially grown on substrates of (001)-oriented (LaAlO3)0.3(SrAl0.5Ta0.5O3)0.7 (LSAT), LaAlO3 (LAO) and SrTiO3 (STO), and (011)-oriented STO using pulse laser deposition. Influence of epitaxial growth on phase competition was inve...

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Bibliographic Details
Published in:Journal of magnetism and magnetic materials Vol. 324; no. 6; pp. 1189 - 1192
Main Authors: Chen, Liping, Chen, Yuansha, Ma, Yubin, Lian, Guijun, Zhang, Yan, Xiong, Guangcheng
Format: Journal Article
Language:English
Published: Amsterdam Elsevier B.V 01-03-2012
Elsevier
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Summary:A series of Pr0.5Sr0.5MnO3 (PSMO) films with various thickness were epitaxially grown on substrates of (001)-oriented (LaAlO3)0.3(SrAl0.5Ta0.5O3)0.7 (LSAT), LaAlO3 (LAO) and SrTiO3 (STO), and (011)-oriented STO using pulse laser deposition. Influence of epitaxial growth on phase competition was investigated. A ferromagnetic metal to antiferromagnetic insulator (FMM–AFI) transition upon cooling is present in both largely compressed situations deposited on LAO (001) and tensile cases deposited on STO (001) but absent in little strained films grown on LSAT (001), indicating that the antiferromagnetic insulating state is favored by strains. On the other hand, the 400nm films deposited on (011)-oriented STO as well as LAO substrates show FMM–AFI transition. These results reveal that both the orientation of epitaxial growth and substrate-induced strain affect the FMM–AFI transition. ► Pr0.5Sr0.5MnO3 films were epitaxially grown on various substrates. ► Influence of epitaxial growth on phase competition was investigated. ► Both growth orientation and substrate-induced strain affect the phase diagram.
ISSN:0304-8853
DOI:10.1016/j.jmmm.2011.11.006