Excited states of the A free exciton in CuInS2

Excited states of the A free exciton in CuInS2

High quality CuInS2 single crystals, grown by the traveling heater method in an indium solvent, were studied using reflectance and photoluminescence at 4.2K. The first, EA(n=2)=1.5494eV, and second, EA(n=3)=1.5532eV, excited states of the A free exciton have been observed in the photoluminescence sp...

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Bibliographic Details
Published in:Applied physics letters Vol. 92; no. 11
Main Authors: Yakushev, M. V., Martin, R. W., Mudryi, A. V., Ivaniukovich, A. V.
Format: Journal Article
Language:English
Published: 17-03-2008
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Summary:High quality CuInS2 single crystals, grown by the traveling heater method in an indium solvent, were studied using reflectance and photoluminescence at 4.2K. The first, EA(n=2)=1.5494eV, and second, EA(n=3)=1.5532eV, excited states of the A free exciton have been observed in the photoluminescence spectra. Accurate values of the A exciton binding energy EFEA=18.5meV and Bohr radius aBA=3.8nm, bandgap Eg=1.5540eV at 4.2K and static dielectric constant ε=10.2 have been derived assuming a hydrogenic model.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2896301