Far infrared and submillimeter impact ionization modulator

Far infrared and submillimeter impact ionization modulator

Free carriers in germanium produced by impact ionization at 4.2°K have been used to modulate 200-µ- to 2-mm-wavelength radiation. Modulation depths up to 100 percent and bandwidths of 100 MHz have been obtained.

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Bibliographic Details
Published in:Proceedings of the IEEE Vol. 57; no. 5; pp. 806 - 807
Main Authors: Melngailis, I., Tannenwald, P.E.
Format: Journal Article
Language:English
Published: IEEE 01-01-1969
Subjects:
Absorption
Breakdown voltage
Germanium
Impact ionization
Ionizing radiation
Magnetic field measurement
Magnetic modulators
Pulse modulation
Radiation detectors
Temperature
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Description
Summary:Free carriers in germanium produced by impact ionization at 4.2°K have been used to modulate 200-µ- to 2-mm-wavelength radiation. Modulation depths up to 100 percent and bandwidths of 100 MHz have been obtained.
ISSN:0018-9219
DOI:10.1109/PROC.1969.7084