Gate turn-off in p-n-p-n devices
A simple two-dimensional model for gated turn-off of a p-n-p-n device is used to derive an expression relating the storage time and the turn-off gain. The observed dependence of storage time on turn-off gain fits the derived expression well for devices specially fabricated consistant with the assump...
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| Published in: | IEEE transactions on electron devices Vol. ED-13; no. 7; pp. 590 - 597 |
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| Main Author: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
IEEE
01-07-1966
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| Online Access: | Get full text |
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| Summary: | A simple two-dimensional model for gated turn-off of a p-n-p-n device is used to derive an expression relating the storage time and the turn-off gain. The observed dependence of storage time on turn-off gain fits the derived expression well for devices specially fabricated consistant with the assumptions of the model. The fall time is discussed qualitatively. |
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| ISSN: | 0018-9383 1557-9646 |
| DOI: | 10.1109/T-ED.1966.15739 |