Film morphology and reaction rate for the CVD of Tungsten by the WF6-SiH4 reaction

• Published in: Journal of electronic materials Vol. 25; no. 9; pp. 1531 - 1538
• Main Authors: GOKCE, O. H, SEARS, J. T, SAHIN, T
• Format: Journal Article
• Language: English
• Published: New York, NY Institute of Electrical and Electronics Engineers 01-09-1996
• Subjects: Applied sciences; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Metals. Metallurgy; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; CVD; Crystal orientation; Transition elements; Morphology; Tungsten; Low pressure; Chemical reactions; Reaction rates; Crystal growth from vapors; Experimental study; Film growth
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/BF02655395