The Electrical Band-Gap Energy of Porous Silicon Measured Versus Sample Temperature
Photocurrent measurements have been carried out on a series of samples consisting of porous silicon on top of crystalline silicon, in the temperature range 10-300 K. From the experimental data set, the electrical band-gap energy of porous silicon is deduced to be (1.80 ± 0.01) eV, independent of sam...
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| Published in: | Journal of porous materials Vol. 7; no. 1-3; pp. 271 - 273 |
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| Main Authors: | , , |
| Format: | Journal Article |
| Language: | English |
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Dordrecht
Springer Nature B.V
01-01-2000
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| Abstract | Photocurrent measurements have been carried out on a series of samples consisting of porous silicon on top of crystalline silicon, in the temperature range 10-300 K. From the experimental data set, the electrical band-gap energy of porous silicon is deduced to be (1.80 ± 0.01) eV, independent of sample temperature. The results are discussed with the conclusion that for the samples studied here, the electrical bandgap in porous silicon is of molecular nature and cannot be related to quantum-confinement properties of nanocrystals of elemental silicon.[PUBLICATION ABSTRACT] |
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| AbstractList | Photocurrent measurements have been carried out on a series of samples consisting of porous silicon on top of crystalline silicon, in the temperature range 10-300 K. From the experimental data set, the electrical band-gap energy of porous silicon is deduced to be (1.80 ± 0.01) eV, independent of sample temperature. The results are discussed with the conclusion that for the samples studied here, the electrical bandgap in porous silicon is of molecular nature and cannot be related to quantum-confinement properties of nanocrystals of elemental silicon.[PUBLICATION ABSTRACT] Photocurrent measurements have been carried out on a series of samples consisting of porous silicon on top of crystalline silicon, in the temperature range 10-300 K. From the experimental data set, the electrical band-gap energy of porous silicon is deduced to be (1.80 +/- 0.01) eV, independent of sample temperature. The results are discussed with the conclusion that for the samples studied here, the electrical bandgap in porous silicon is of molecular nature and cannot be related to quantum-confinement properties of nanocrystals of elemental silicon. |
| Author | Melcher, Pg Veje, E Frederiksen, Jt |
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| CitedBy_id | crossref_primary_10_2109_jcersj2_117_561 crossref_primary_10_1039_C4TA01677G crossref_primary_10_1016_j_nanoen_2015_08_022 crossref_primary_10_1002_advs_201700684 crossref_primary_10_1039_b808500e crossref_primary_10_1016_j_ijhydene_2016_09_048 |
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| Copyright | Kluwer Academic Publishers 2000 |
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| SubjectTerms | Crystal structure Nanocrystals Photocurrent Photoelectric effect Porous materials Porous silicon Silicon |
| Title | The Electrical Band-Gap Energy of Porous Silicon Measured Versus Sample Temperature |
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