The Electrical Band-Gap Energy of Porous Silicon Measured Versus Sample Temperature

The Electrical Band-Gap Energy of Porous Silicon Measured Versus Sample Temperature

Photocurrent measurements have been carried out on a series of samples consisting of porous silicon on top of crystalline silicon, in the temperature range 10-300 K. From the experimental data set, the electrical band-gap energy of porous silicon is deduced to be (1.80 ± 0.01) eV, independent of sam...

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Bibliographic Details
Published in:Journal of porous materials Vol. 7; no. 1-3; pp. 271 - 273
Main Authors: Frederiksen, Jt, Melcher, Pg, Veje, E
Format: Journal Article
Language:English
Published: Dordrecht Springer Nature B.V 01-01-2000
Subjects:
Crystal structure
Nanocrystals
Photocurrent
Photoelectric effect
Porous materials
Porous silicon
Silicon
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Summary:Photocurrent measurements have been carried out on a series of samples consisting of porous silicon on top of crystalline silicon, in the temperature range 10-300 K. From the experimental data set, the electrical band-gap energy of porous silicon is deduced to be (1.80 ± 0.01) eV, independent of sample temperature. The results are discussed with the conclusion that for the samples studied here, the electrical bandgap in porous silicon is of molecular nature and cannot be related to quantum-confinement properties of nanocrystals of elemental silicon.[PUBLICATION ABSTRACT]
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1380-2224
1573-4854
DOI:10.1023/A:1009679930431