Terahertz spectroscopy on hole transport in pentacene thin films

Terahertz spectroscopy on hole transport in pentacene thin films

Charge transport in pentacene thin films is investigated using terahertz electromodulation spectroscopy. Although the material is highly polycrystalline, a hole mobility of about 20 cm2/Vs is found, which exceeds the mobility obtained in DC measurements by orders of magnitude. The high AC mobility r...

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Bibliographic Details
Published in:Applied physics letters Vol. 105; no. 1
Main Authors: Engelbrecht, S. G., Prinz, M., Arend, T. R., Kersting, R.
Format: Journal Article
Language:English
Published: Melville American Institute of Physics 07-07-2014
Subjects:
Applied physics
Charge transport
Current carriers
Grain boundaries
Hole mobility
Silicon
Spectroscopy
Spectrum analysis
Thin films
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Summary:Charge transport in pentacene thin films is investigated using terahertz electromodulation spectroscopy. Although the material is highly polycrystalline, a hole mobility of about 20 cm2/Vs is found, which exceeds the mobility obtained in DC measurements by orders of magnitude. The high AC mobility results from a motion of charge carriers, which is not hindered by grain boundaries. An upper limit of mh*≈0.8 me is deduced for the conductivity effective mass of holes in pentacene.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4887237