Direct evidence of strain transfer for InAs island growth on compliant Si substrates

• Published in: Applied physics letters Vol. 106; no. 15
• Main Authors: Marçal, L. A. B., Richard, M.-I., Magalhães-Paniago, R., Cavallo, F., Lagally, M. G., Schmidt, O. G., Schülli, T. Ü., Deneke, Ch, Malachias, Angelo
• Format: Journal Article
• Language: English
• Published: United States 13-04-2015
• Subjects: COMPARATIVE EVALUATIONS; COMPUTERIZED SIMULATION; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELASTICITY; FINITE ELEMENT METHOD; INDIUM ARSENIDES; LAYERS; SEMICONDUCTOR MATERIALS; SILICON; STRAINS; SUBSTRATES; SYNCHROTRON RADIATION; THIN FILMS; THREE-DIMENSIONAL CALCULATIONS; THREE-DIMENSIONAL LATTICES; X-RAY DIFFRACTION
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.4918615

Semiconductor heteroepitaxy on top of thin compliant layers has been explored as a path to make inorganic electronics mechanically flexible as well as to integrate materials that cannot be grown directly on rigid substrates. Here, we show direct evidences of strain transfer for InAs islands on freestanding Si thin films (7 nm). Synchrotron X-ray diffraction measurements using a beam size of 300 × 700 nm2 can directly probe the strain status of the compliant substrate underneath deposited islands. Using a recently developed diffraction mapping technique, three-dimensional reciprocal space maps were reconstructed around the Si (004) peak for specific illuminated positions of the sample. The strain retrieved was analyzed using continuous elasticity theory via Finite-element simulations. The comparison of experiment and simulations yields the amount of strain from the InAs islands, which is transferred to the compliant Si thin film.